Size effects on generation-recombination noise

CHAPTER 2 Generation - Recombination Noise in Semiconductors

Analysis and modelling of generation–recombination noise in amorphous semiconductors

We examine several analytical models with different predictions for noise associated with conductivity fluctuations in homogeneous thin film semiconductors. In one model, the noise spectrum is assumed to reflect separately the release times of groups of trapping centres in the material. In another, the trapping time into the whole distribution of traps is assumed to dominate, predicting that, i...

Generation-recombination noise in highly asymmetrical p – n junctions

A previous theory for the current noise associated with carrier generation and recombination in the space-charge region of p – n junctions is recalculated for the case of a highly asymmetrical distribution of dopant impurities. We propose a model based on the true concentrations of electrons and holes and electric field in the space-charge layer. Carriers coming from the highly doped region cre...

GENERATION-RECOMBINATION AND 1/f NOISE IN AL0.4GA0.6N THIN FILMS

Low-frequency noise in Al0.4Ga0.6N thin films (50 nm) was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination noise were observed. Hooge parameter, α, was estimated to be about 7. The activation energy for observed generation-recombination noise was found to be Ea ~ 1.0 eV. This activation energy is consistent with the a...

Characterization of generation±recombination noise using a physics-based device noise simulator

The implementation of generation±recombination (g±r) noise in a partial di€erential equation based device simulator is presented. Derived from the Shockley±Read±Hall model, the strength of each local g±r noise source is calculated based on the carrier transition rates between the conduction band, valence band, and trap states. The perturbations of these local g±r noise sources are then transmit...